Development of micro-bump-bonded processes for 3DIC stacking with high throughput

Abstract

Various approaches of high throughput bonding processes were investigated in the micro-bump-bonded processes for 3DIC stacking. The two-step bonding methods, TCB + reflow, TCB + post-bonding and conventional flip-chip process were evaluated in this study. Moreover, the two-step process with different TCB process times (1s, 3s and 5 s) were implemented into the first step. The partial melted joints, which were attained by TCB process, were expected to be fully bonded by the second step (reflow or post-bonding). Then, the temperature cycling test (TCT) was performed to verify reliability performance of the micro-bump-bonded interconnects. Based on the experimental and reliability results, the optimized conditions for the two-step bonding methods and a cost effective solution for the applications of 3DIC stacking can be established.