Very low parasitic inductance double side cooling power modules based on ceramic substrates and GaN devices

Abstract

In this work, a new 650V double-side cooling inverter leg, using ceramic substrates and bare GaN on silicon transistors, compatible with high operating temperature, has been designed, manufactured and tested. It exhibits a parasitic inductance of 3 nH at 100 MHz. This paper firstly presents a review of parasitic elements reduction in power modules, and then it describes in details the technology, the design optimization, the original test strategy, the manufacturing process, and finally presents and discuss the electrical results.