Ultra low profile thin film capacitor for high performance electronic packages

Kenichi Yoshida, Hitoshi Saita, T. Kariya
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引用次数: 3

Abstract

Thin film capacitor (Z-Leveler®) has been developed with our unique technology to form dielectric thin film layer on metallic foil. This thin film technology allows Z-Leveler® to have ultra low profile less than 50μm thickness with flexibility by using metallic foil as substrate and high capacitance density by using a fully crystalized barium titanate (BT) material as dielectric layer. In addition, Z-Leveler® can have very low equivalent series inductance (ESL) less than 10pH, which leads keeping the impedance low in high frequency such as more than 100MHz. This Z-Leveler® technology will lead a new electronic package concept by replacing the conventional embedding or surface mounting electronic component to have high performance and good power efficiency for high-speed communication and computing application.
用于高性能电子封装的超低轮廓薄膜电容器
薄膜电容器(Z-Leveler®)采用我们独特的技术在金属箔上形成介电薄膜层。这种薄膜技术允许Z-Leveler®具有小于50μm厚度的超低形,通过使用金属箔作为衬底具有灵活性,并且通过使用完全结晶的钛酸钡(BT)材料作为介电层具有高电容密度。此外,Z-Leveler®具有小于10pH的极低等效串联电感(ESL),从而在超过100MHz的高频下保持低阻抗。Z-Leveler®技术将取代传统的嵌入式或表面安装电子元件,引领新的电子封装概念,具有高性能和良好的功率效率,适用于高速通信和计算应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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