{"title":"Ultra low profile thin film capacitor for high performance electronic packages","authors":"Kenichi Yoshida, Hitoshi Saita, T. Kariya","doi":"10.1109/ectc32862.2020.00073","DOIUrl":null,"url":null,"abstract":"Thin film capacitor (Z-Leveler®) has been developed with our unique technology to form dielectric thin film layer on metallic foil. This thin film technology allows Z-Leveler® to have ultra low profile less than 50μm thickness with flexibility by using metallic foil as substrate and high capacitance density by using a fully crystalized barium titanate (BT) material as dielectric layer. In addition, Z-Leveler® can have very low equivalent series inductance (ESL) less than 10pH, which leads keeping the impedance low in high frequency such as more than 100MHz. This Z-Leveler® technology will lead a new electronic package concept by replacing the conventional embedding or surface mounting electronic component to have high performance and good power efficiency for high-speed communication and computing application.","PeriodicalId":6722,"journal":{"name":"2020 IEEE 70th Electronic Components and Technology Conference (ECTC)","volume":"1 1","pages":"414-418"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE 70th Electronic Components and Technology Conference (ECTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ectc32862.2020.00073","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Thin film capacitor (Z-Leveler®) has been developed with our unique technology to form dielectric thin film layer on metallic foil. This thin film technology allows Z-Leveler® to have ultra low profile less than 50μm thickness with flexibility by using metallic foil as substrate and high capacitance density by using a fully crystalized barium titanate (BT) material as dielectric layer. In addition, Z-Leveler® can have very low equivalent series inductance (ESL) less than 10pH, which leads keeping the impedance low in high frequency such as more than 100MHz. This Z-Leveler® technology will lead a new electronic package concept by replacing the conventional embedding or surface mounting electronic component to have high performance and good power efficiency for high-speed communication and computing application.