Electrostatically-reversible polarity of dual-gated graphene transistors with He ion irradiated channel: Toward reconfigurable CMOS applications

S. Nakaharai, T. Iijima, Shinich Ogawa, Shingo Suzuki, K. Tsukagoshi, S. Sato, Naoki Yokoyama
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引用次数: 21

Abstract

We found that a transistor with a graphene channel irradiated with He ion beams can have a transport gap of up to 380 meV. We made novel dual-gated transistors using such a channel and obtained an on-off ratio up to 103 at 200 K. This novel device has a channel region between dual gates, and the polarity of the transistor (n- or p-type) can be electrostatically reversed by simply flipping the bias polarity of one of the dual gates.
具有He离子辐照通道的双门控石墨烯晶体管的静电可逆极性:面向可重构CMOS应用
我们发现,在氦离子束照射下,石墨烯通道晶体管的输运间隙可达380 meV。我们利用这种通道制造了新型双门控晶体管,并在200k下获得了高达103的通断比。这种新型器件在双栅极之间有一个通道区域,通过简单地翻转其中一个双栅极的偏置极性,晶体管(n型或p型)的极性可以静电地逆转。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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