Heteroepitaxial growth and power electronics using AlGaN/GaN HEMT on Si

T. Egawa
{"title":"Heteroepitaxial growth and power electronics using AlGaN/GaN HEMT on Si","authors":"T. Egawa","doi":"10.1109/IEDM.2012.6479112","DOIUrl":null,"url":null,"abstract":"Developments of heteroepitaxial growth and characteristics of an AlGaN/GaN HEMT on a Si substrate are reported. High-temperature-grown AlGaN/AlN intermediate layers and GaN/AlN strained layer superlattice are effective in improving the crystallinity of a following GaN layer and for growing thick device structure on Si, which resulted in obtaining high-breakdown voltage. The AlGaN/GaN HEMT on Si exhibited the breakdown voltage as high as 1402 V with a state-of-the-art figure-of-merit (FOM = BV<sup>2</sup>/R<sub>on</sub>) of 2.6×10<sup>8</sup> V<sup>2</sup>Ω<sup>-1</sup>cm<sup>-2</sup>.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"12 1","pages":"27.1.1-27.1.4"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"37","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2012.6479112","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 37

Abstract

Developments of heteroepitaxial growth and characteristics of an AlGaN/GaN HEMT on a Si substrate are reported. High-temperature-grown AlGaN/AlN intermediate layers and GaN/AlN strained layer superlattice are effective in improving the crystallinity of a following GaN layer and for growing thick device structure on Si, which resulted in obtaining high-breakdown voltage. The AlGaN/GaN HEMT on Si exhibited the breakdown voltage as high as 1402 V with a state-of-the-art figure-of-merit (FOM = BV2/Ron) of 2.6×108 V2Ω-1cm-2.
在Si上使用AlGaN/GaN HEMT的异质外延生长和功率电子学
本文报道了硅衬底上AlGaN/GaN HEMT的异质外延生长和特性的进展。高温生长的AlGaN/AlN中间层和GaN/AlN应变层超晶格可以有效地提高后续GaN层的结晶度,并在Si上生长较厚的器件结构,从而获得高击穿电压。Si上的AlGaN/GaN HEMT的击穿电压高达1402 V,其质量因数(FOM = BV2/Ron)为2.6×108 V2Ω-1cm-2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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