High-voltage monolithic 3D capacitors based on through-silicon-via technology

Abstract

High-voltage monolithic 3D capacitors operating at breakdown voltages up to 200 V are fabricated based on through silicon-via technology. Electric characteristics of monolithic 3D capacitors exhibit a capacitance density of 17 times larger than that of planar capacitors with the same area and dielectric thickness. Impact of the 3D capacitors' architecture on their electrical properties is studied for various patterns and geometries.