K. Nagashio, R. Ifuku, T. Moriyama, T. Nishimura, A. Toriumi
{"title":"Intrinsic graphene/metal contact","authors":"K. Nagashio, R. Ifuku, T. Moriyama, T. Nishimura, A. Toriumi","doi":"10.1109/IEDM.2012.6478975","DOIUrl":null,"url":null,"abstract":"This paper presents our recent understanding of metal/graphene contact in terms of intrinsic interface obtained from the comparison between resist-free and conventional EB processes, and discusses future challenges to reduce the contact resistivity.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"32 1","pages":"4.1.1-4.1.4"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2012.6478975","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
This paper presents our recent understanding of metal/graphene contact in terms of intrinsic interface obtained from the comparison between resist-free and conventional EB processes, and discusses future challenges to reduce the contact resistivity.