Alternative integration of ultralow-k dielectrics by template replacement approach

Abstract

Replacement of sacrificial template by ultralow-k dielectric was studied as an alternative integration approach for Cu/low-k interconnect. Metallization structure was first formed by patterning a template material. After template removal, a spin-on porous low-k was deposited on the metal lines. Then, planarization of the excess low-k was performed by CMP. The proposed approach does solve the two major challenges in conventional Cu/low-k damascene integration approach: low-k plasma damage and metal penetration during barrier deposition on porous structures.