{"title":"Electrical Shorting Propensity of Tin Whiskers","authors":"Sungwon Han, M. Osterman, M. Pecht","doi":"10.1109/TEPM.2010.2053377","DOIUrl":null,"url":null,"abstract":"When a tin whisker bridges two differently biased conductors, an electrical short is not guaranteed. In many instances, the voltage must exceed a threshold level in order to produce current flow due to weak physical contact and the presence of a non-conductive film such as an oxide layer. This paper presents a study that examines the breakdown voltage of tin whiskers and its relation to contact force. Whisker contact force studies were conducted using gold- and tin-coated tungsten probes, and the breakdown voltage was measured using a semiconductor parameter analyzer. It was verified that contact force is a critical factor in determining the type of current-voltage transition and level of breakdown voltage. Lower contact force between the probe and the whiskers caused the multiple transitions in current-voltage characteristics. The tin oxide layers on whiskers were analyzed using field emission transmission electron microscopy (FE-TEM).","PeriodicalId":55010,"journal":{"name":"IEEE Transactions on Electronics Packaging Manufacturing","volume":"12 1","pages":"205-211"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electronics Packaging Manufacturing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TEPM.2010.2053377","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
When a tin whisker bridges two differently biased conductors, an electrical short is not guaranteed. In many instances, the voltage must exceed a threshold level in order to produce current flow due to weak physical contact and the presence of a non-conductive film such as an oxide layer. This paper presents a study that examines the breakdown voltage of tin whiskers and its relation to contact force. Whisker contact force studies were conducted using gold- and tin-coated tungsten probes, and the breakdown voltage was measured using a semiconductor parameter analyzer. It was verified that contact force is a critical factor in determining the type of current-voltage transition and level of breakdown voltage. Lower contact force between the probe and the whiskers caused the multiple transitions in current-voltage characteristics. The tin oxide layers on whiskers were analyzed using field emission transmission electron microscopy (FE-TEM).