New findings on inversion-layer mobility in highly doped channel Si MOSFETs

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. Pub Date : 2005-12-05 DOI:10.1109/IEDM.2005.1609287

Y. Nakabayashi, T. Ishihara, J. Koga, M. Takayanagi, S. Takagi

引用次数: 7

Abstract

Inversion-layer mobility in highly doped channel Si MOSFETs was investigated. It was found, for the first time, substrate Coulomb scattering (mu_sub) has anomalous surface carrier density (N _S) dependence when acceptor concentration (N_A) becomes larger than 2times10¹⁸ cm^-3. The mu _sub behavior can be explained by the suppression of the screening effect. In addition, interface Coulomb scattering (mu_it) has stronger N_S dependence than ever reported. The mu_it behavior can be explained in terms of the relative distance between the surface carriers and interface states. Influence of high channel doping on MOS interface barrier height was also studied

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高掺杂沟道Si mosfet中反转层迁移率的新发现

研究了高掺杂沟道硅mosfet的反转层迁移率。首次发现，当受体浓度(NA)大于2倍1018 cm-3时，衬底库仑散射(musub)对表面载流子密度(ns)有异常依赖。mu子行为可以用抑制筛选效应来解释。此外，界面库仑散射(muit)具有较强的NS依赖性。这种多态行为可以用表面载流子与界面态之间的相对距离来解释。研究了高通道掺杂对MOS界面势垒高度的影响

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

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