Low-Frequency Admittance of Capacitor with Working Substance “Insulator–Partially Disordered Semiconductor– Insulator”

Abstract

The study of the electrophysical characteristics of crystalline semiconductors with structural defects is of practical interest in the development of radiation-resistant varactors. The capacitance-voltage characteristics of a disordered semiconductor can be used to determine the concentration of point defects in its crystal matrix. The purpose of this work is to calculate the low-frequency admittance of a capacitor with the working substance “insulator–crystalline semiconductor with point t-defects in charge states (−1), (0) and (+1)–insulator”. A layer of a partially disordered semiconductor with a thickness of 150 μm is separated from the metal plates of the capacitor by insulating layers of polyimide with a thickness of 3 μm. The partially disordered semiconductor of the working substance of the capacitor can be, for example, a highly defective crystalline silicon containing point t-defects randomly (Poissonian) distributed over the crystal in charge states (−1), (0), and (+1), between which single electrons migrate in a hopping manner. It is assumed that the electron hops occur only from t-defects in the charge state (−1) to t-defects in the charge state (0) and from t-defects in the charge state (0) to t-defects in the charge state (+1).In this work, for the first time, the averaging of the hopping diffusion coefficients over all probable electron hopping lengths via t-defects in the charge states (−1), (0) and (0), (+1) in the covalent crystal matrix was carried out. For such an element, the low-frequency admittance and phase shift angle between current and voltage as the functions on the voltage applied to the capacitor electrodes were calculated at the t-defect concentration of 3∙1019 cm−3 for temperatures of 250, 300, and 350 K and at temperature of 300 K for the t-defect concentrations of 1∙1019, 3∙1019, and 1∙1020 cm−3.