Hybrid Fan-out Package for Vertical Heterogeneous Integration

Po-Yao Chuang, M. Lin, Shih-Ting Hung, Y.-W. Wu, D. Wong, M. Yew, C. Hsu, L. Liao, P.-Y. Lai, P.-H. Tsai, S.M. Chen, S. Cheng, S. Jeng
{"title":"Hybrid Fan-out Package for Vertical Heterogeneous Integration","authors":"Po-Yao Chuang, M. Lin, Shih-Ting Hung, Y.-W. Wu, D. Wong, M. Yew, C. Hsu, L. Liao, P.-Y. Lai, P.-H. Tsai, S.M. Chen, S. Cheng, S. Jeng","doi":"10.1109/ectc32862.2020.00061","DOIUrl":null,"url":null,"abstract":"A new ultra-thin high-density hybrid package that combines fan-out RDL with a backside laminated interposer is developed for mobile applications. The package features up to six fan-out RDL layers for chiplet integration and two to four routing layers in a backside interposer for a high pin-count module stacking architecture. The laminated interposer is placed conformally to the SOC to create a base package as thin as 250 um. An integration challenge in the CTE mismatch between fan-out RDL and laminated interposer is successfully resolved. For a 14x14 mm2 package, a low package warpage is achieved at RT and HT, measured at 37um and -46um, respectively. The twist index is also controlled within 30um. Despite its thinness, the new hybrid package shows enhanced mechanical strength by incorporating the laminated interposer. It is successfully demonstrated that memory and RF modules can be stacked on this thin base package using the standard production flow. The thin packages pass stringent component and board level reliability tests. The new hybrid package combines the electrical and thermal advantages of fan-out packages and the mechanical advantage of laminated interposers. This hybrid fan-out package has a very high interconnect density, which provides excellent design flexibility for advanced vertical heterogeneous integrations.","PeriodicalId":6722,"journal":{"name":"2020 IEEE 70th Electronic Components and Technology Conference (ECTC)","volume":"29 1","pages":"333-338"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE 70th Electronic Components and Technology Conference (ECTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ectc32862.2020.00061","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

A new ultra-thin high-density hybrid package that combines fan-out RDL with a backside laminated interposer is developed for mobile applications. The package features up to six fan-out RDL layers for chiplet integration and two to four routing layers in a backside interposer for a high pin-count module stacking architecture. The laminated interposer is placed conformally to the SOC to create a base package as thin as 250 um. An integration challenge in the CTE mismatch between fan-out RDL and laminated interposer is successfully resolved. For a 14x14 mm2 package, a low package warpage is achieved at RT and HT, measured at 37um and -46um, respectively. The twist index is also controlled within 30um. Despite its thinness, the new hybrid package shows enhanced mechanical strength by incorporating the laminated interposer. It is successfully demonstrated that memory and RF modules can be stacked on this thin base package using the standard production flow. The thin packages pass stringent component and board level reliability tests. The new hybrid package combines the electrical and thermal advantages of fan-out packages and the mechanical advantage of laminated interposers. This hybrid fan-out package has a very high interconnect density, which provides excellent design flexibility for advanced vertical heterogeneous integrations.
垂直异构集成的混合扇出包
一种新型超薄高密度混合封装,结合了扇形RDL和背面层压中间层,用于移动应用。该封装具有多达六个扇出RDL层,用于芯片集成,并在背面中间层中提供两到四个路由层,用于高引脚数模块堆叠架构。层压中间层与SOC呈保形放置,以创建薄至250 um的基本封装。成功解决了扇出式RDL与层压中间层之间CTE不匹配的集成难题。对于14x14mm2封装,在RT和HT下实现了低封装翘曲,分别测量为37um和-46um。捻度指数也控制在30um以内。尽管它的薄,新的混合封装显示增强的机械强度,通过合并层压中间层。成功地证明了使用标准生产流程可以将内存和射频模块堆叠在这个薄基封装上。薄封装通过严格的组件级和板级可靠性测试。新的混合封装结合了扇出封装的电气和热优势以及层压中间层的机械优势。这种混合扇出封装具有非常高的互连密度,为先进的垂直异构集成提供了出色的设计灵活性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信