T. Hosoi, Shuji Azumo, Yusaku Kashiwagi, S. Hosaka, R. Nakamura, Shuhei Mitani, Y. Nakano, H. Asahara, Takashi Nakamura, Tsunenobu Kimoto, T. Shimura, Heiji Watanabe
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引用次数: 25
Abstract
We have developed AlON high-k gate dielectric technology that can be easily implemented into both planar and trench SiC-based MOSFETs. On the basis of electrical characterization and numerical simulation, the thickness ratio of the AlON layer to the SiO2 interlayer and nitrogen content in AlON film were carefully optimized to enhance device performance and reliability.
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