Optoelectronic properties of transparent oxide semiconductor ASnO3 (A = Ba, Sr, and Ca) epitaxial films and thin film transistors

IF 2.4 3区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Journal of Vacuum Science & Technology A Pub Date : 2022-03-01 DOI:10.1116/6.0001474

A. Sanchela, M. Wei, H. Cho, H. Ohta

引用次数: 4

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透明氧化物半导体ASnO3 (A = Ba, Sr，和Ca)外延薄膜和薄膜晶体管的光电性能

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Vacuum Science & Technology A 工程技术-材料科学：膜

CiteScore

5.10

自引率

10.30%

发文量

247

审稿时长

2.1 months

期刊介绍： Journal of Vacuum Science & Technology A publishes reports of original research, letters, and review articles that focus on fundamental scientific understanding of interfaces, surfaces, plasmas and thin films and on using this understanding to advance the state-of-the-art in various technological applications.