Influences of etching chemical parameters on AlGaN/GaN electrical degradation in power devices

IF 1.4 4区 工程技术
Frédéric Le Roux, N. Possémé, P. Burtin
{"title":"Influences of etching chemical parameters on AlGaN/GaN electrical degradation in power devices","authors":"Frédéric Le Roux, N. Possémé, P. Burtin","doi":"10.1116/6.0001130","DOIUrl":null,"url":null,"abstract":"The influence of chemical parameters on electrical degradation in an AlGaN/GaN heterostructure was investigated in order to improve performance in metal-oxide-semiconductor high-electron mobility transistor devices. We first examined the influence of plasma chemistry on electrical degradation by using different plasma chemistries for the SiN capping layer opening and comparing the results. The full standard chemistry was evaluated in order to determine the impact of each gas on the degradation. Rsheet and x-ray photoelectron microscopy characterizations and simulations were performed to better understand how light elements such as helium penetrate deeply into the heterostructure and degrade its electrical characteristics. The materials used as masks were also studied. A photoresist mask and a SiN mask were compared on an AlGaN/GaN heterostructure during plasma processing. Electrical degradation was always greater in the presence of a resist due to the decomposition of the resist under the plasma causing hydrogen to be released into the plasma. Simulation of hydrogen implantation in AlGaN was also performed to understand its impact on electrical performance.","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"28 1","pages":""},"PeriodicalIF":1.4000,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Vacuum Science & Technology B","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0001130","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

The influence of chemical parameters on electrical degradation in an AlGaN/GaN heterostructure was investigated in order to improve performance in metal-oxide-semiconductor high-electron mobility transistor devices. We first examined the influence of plasma chemistry on electrical degradation by using different plasma chemistries for the SiN capping layer opening and comparing the results. The full standard chemistry was evaluated in order to determine the impact of each gas on the degradation. Rsheet and x-ray photoelectron microscopy characterizations and simulations were performed to better understand how light elements such as helium penetrate deeply into the heterostructure and degrade its electrical characteristics. The materials used as masks were also studied. A photoresist mask and a SiN mask were compared on an AlGaN/GaN heterostructure during plasma processing. Electrical degradation was always greater in the presence of a resist due to the decomposition of the resist under the plasma causing hydrogen to be released into the plasma. Simulation of hydrogen implantation in AlGaN was also performed to understand its impact on electrical performance.
蚀刻化学参数对功率器件中AlGaN/GaN电降解的影响
为了提高金属氧化物半导体高电子迁移率晶体管器件的性能,研究了化学参数对AlGaN/GaN异质结构电降解的影响。我们首先研究了等离子体化学对电降解的影响,通过使用不同的等离子体化学来打开SiN封盖层并比较结果。为了确定每种气体对降解的影响,对整个标准化学进行了评估。为了更好地理解氦等轻元素如何深入渗透到异质结构中并降低其电学特性,进行了Rsheet和x射线光电子显微镜表征和模拟。并对掩模材料进行了研究。在等离子体处理过程中,比较了光刻胶掩膜和SiN掩膜在AlGaN/GaN异质结构上的性能。由于电阻在等离子体下分解导致氢被释放到等离子体中,因此电阻存在时电降解总是更大。模拟氢注入AlGaN的过程,了解其对电学性能的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Vacuum Science & Technology B
Journal of Vacuum Science & Technology B 工程技术-工程:电子与电气
自引率
14.30%
发文量
0
审稿时长
2.5 months
期刊介绍: Journal of Vacuum Science & Technology B emphasizes processing, measurement and phenomena associated with micrometer and nanometer structures and devices. Processing may include vacuum processing, plasma processing and microlithography among others, while measurement refers to a wide range of materials and device characterization methods for understanding the physics and chemistry of submicron and nanometer structures and devices.
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