ZnO-on-Diamond Resonators with Notched Thin-Film Piezoelectric Interdigital Transducer for Enhanced Signal-to-Noise Ratio and Feedthrough Suppression

Xu Han, Di Lan, Jing Wang
{"title":"ZnO-on-Diamond Resonators with Notched Thin-Film Piezoelectric Interdigital Transducer for Enhanced Signal-to-Noise Ratio and Feedthrough Suppression","authors":"Xu Han, Di Lan, Jing Wang","doi":"10.1109/MEMS46641.2020.9056260","DOIUrl":null,"url":null,"abstract":"This paper presents an innovative and convenient postprocessing methodology to improve the signal-to-noise ratio (SNR) by 3 dB or more than that of the original two-port piezoelectric MEMS resonator by introducing notched air cavities in the thin-film piezo-transducer layer between interdigital transducer (IDT) electrodes. Meanwhile, this strategy also effectively lowers the broadband feedthrough levels by more than 10 dB by substituting piezoelectric layer with the air cavities in the notched regions. This postprocessing technique also does not negatively impact the electromechanical coupling coefficients (signal strength) or the quality factors of the MEMS resonators. In addition, several spurious modes are adequately suppressed because of the modified distribution of electric fields and strain fields in the piezoelectric thin-film transducer adjacent to IDT electrodes. The equivalent circuit models that combine the motional current signal and the electronic feedthrough parasitics, while considering the notched IDT transducer design, have been developed and verified that match well with the measured frequency characteristics.","PeriodicalId":6776,"journal":{"name":"2020 IEEE 33rd International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"19 1","pages":"1289-1291"},"PeriodicalIF":0.0000,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE 33rd International Conference on Micro Electro Mechanical Systems (MEMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMS46641.2020.9056260","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

This paper presents an innovative and convenient postprocessing methodology to improve the signal-to-noise ratio (SNR) by 3 dB or more than that of the original two-port piezoelectric MEMS resonator by introducing notched air cavities in the thin-film piezo-transducer layer between interdigital transducer (IDT) electrodes. Meanwhile, this strategy also effectively lowers the broadband feedthrough levels by more than 10 dB by substituting piezoelectric layer with the air cavities in the notched regions. This postprocessing technique also does not negatively impact the electromechanical coupling coefficients (signal strength) or the quality factors of the MEMS resonators. In addition, several spurious modes are adequately suppressed because of the modified distribution of electric fields and strain fields in the piezoelectric thin-film transducer adjacent to IDT electrodes. The equivalent circuit models that combine the motional current signal and the electronic feedthrough parasitics, while considering the notched IDT transducer design, have been developed and verified that match well with the measured frequency characteristics.
用于提高信噪比和馈通抑制的带缺口薄膜压电数字间换能器的zno -金刚石谐振器
本文提出了一种创新且方便的后处理方法,通过在数字间换能器(IDT)电极之间的薄膜压电换能器层中引入陷波气腔,将原双端口压电MEMS谐振器的信噪比(SNR)提高3db或以上。同时,该策略还通过在陷波区用空腔代替压电层,有效地降低了宽带馈通电平10 dB以上。这种后处理技术也不会对MEMS谐振器的机电耦合系数(信号强度)或质量因素产生负面影响。此外,由于邻近IDT电极的压电薄膜换能器中电场和应变场分布的改变,一些杂散模式得到了充分的抑制。在考虑陷波IDT换能器设计的情况下,建立了结合运动电流信号和电子馈通寄生的等效电路模型,并进行了验证,该模型与实测频率特性吻合较好。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信