High performance nanocrystalline-Si TFT fabricated at 150/spl deg/ C using ICP-CVD

Abstract

Nanocrystalline silicon (nc-Si) thin film transistors (TFTs) were fabricated using ICP-CVD at 150degC. The fabricated nc-Si TFT exhibits high field effect mobility exceeding 22cm2/Vs and a low sub-threshold slope of 0.45V/dec. The nc-Si film deposited 150degC as an active layer of the TFT shows good crystallinity more than 70% and the gate insulator SiO2 film deposited by ICP-CVD at 150degC shows good electrical characteristics such as flat band voltage of -1.8V and breakdown voltage of 6.2MV/cm