Influence of alloying the copper supply layer on the retention of CBRAM

Abstract

Conductive Bridge Random Access Memory (CBRAM) is one of the emerging technologies for future memory devices. However, one of the main challenges is to ensure high temperature data retention. In this work, the use of different copper alloys as cation supply layer and their influence on the retention properties of CBRAM cells are presented. Also the thermal stability of the Cu alloys, which is important to sustain the temperatures applied during device fabrication, is investigated.