Study on non-uniformity of Through-Mask electroplated Ni thin-film

Jun Tang, Hong Wang, Rui Liu, Shengping Mao, Xiaolin Zhao, G. Ding
{"title":"Study on non-uniformity of Through-Mask electroplated Ni thin-film","authors":"Jun Tang, Hong Wang, Rui Liu, Shengping Mao, Xiaolin Zhao, G. Ding","doi":"10.1109/ICEPT.2008.4606993","DOIUrl":null,"url":null,"abstract":"Through-mask electroplating has been widely used in the fabrication of chips, BGA substrates and PCBs etc. The uniformity of plating thin-film is the major factor contributed to the reliability of the products. Currently, it is usually by setting optimum plating parameters and adopting electrochemical method to achieve the uniformity of plating. However, the problem of non-uniform distribution of electric field, which is the major cause of the non-uniformity of the plating thin-film, has not been solved. In this paper, finite element method (FEM) was developed to analyze the non-uniform distribution of electric field under different conditions in the process of electroplating. The results show that different thickness of photo-resist and size of electroplating cell are two major factors contribute to the uniformity of plating thin-film. The uniform of electroplating cell can be improved by adding in-chip auxiliary electrode. Also better uniformity of the plating film in radial direction can achieved by setting a shield in the proper position of the plating solution and annular out-chip auxiliary electrode (Cu) around the wafer. The simulation results were consistent with experimental results, which proved that finite element method is an effect way to simulate the electroplating process.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":"162 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEPT.2008.4606993","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

Through-mask electroplating has been widely used in the fabrication of chips, BGA substrates and PCBs etc. The uniformity of plating thin-film is the major factor contributed to the reliability of the products. Currently, it is usually by setting optimum plating parameters and adopting electrochemical method to achieve the uniformity of plating. However, the problem of non-uniform distribution of electric field, which is the major cause of the non-uniformity of the plating thin-film, has not been solved. In this paper, finite element method (FEM) was developed to analyze the non-uniform distribution of electric field under different conditions in the process of electroplating. The results show that different thickness of photo-resist and size of electroplating cell are two major factors contribute to the uniformity of plating thin-film. The uniform of electroplating cell can be improved by adding in-chip auxiliary electrode. Also better uniformity of the plating film in radial direction can achieved by setting a shield in the proper position of the plating solution and annular out-chip auxiliary electrode (Cu) around the wafer. The simulation results were consistent with experimental results, which proved that finite element method is an effect way to simulate the electroplating process.
透掩膜镀镍薄膜不均匀性的研究
通过掩模电镀已广泛应用于芯片、BGA衬底和pcb等领域。镀层的均匀性是影响产品可靠性的主要因素。目前,通常是通过设定最佳电镀参数和采用电化学方法来达到镀层的均匀性。然而,电场分布不均匀的问题是导致镀层不均匀的主要原因,一直没有得到解决。本文采用有限元法对电镀过程中不同条件下电场的不均匀分布进行了分析。结果表明,光刻胶厚度和电镀槽尺寸的不同是影响镀层均匀性的两个主要因素。通过在片内添加辅助电极,可以改善电镀槽的均匀性。在镀液的适当位置设置屏蔽层,在晶圆周围设置环形片外辅助电极(Cu),可以使镀层径向均匀性更好。仿真结果与实验结果吻合较好,证明了有限元法是一种有效的模拟电镀过程的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信