Novel channel materials for ballistic nanoscale MOSFETs-bandstructure effects

A. Rahman, Gerhard Klimeck, M. Lundstrom
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引用次数: 54

Abstract

Performance limits of unstrained n- and p- MOSFETs with Si, Ge, GaAs and InAs channel materials are investigated using a 20 band sp3d5s*-SO semi-empirical atomistic tight-binding model and a top-of-the-barrier seminumerical ballistic transport model. It is observed that although the deeply scaled III-V devices offer very high electron injection velocities, their very low conduction band density-of-states strongly degrades their performance. Due to the high density-of-states for both electrons and holes in Ge, nanoscale devices with Ge as channel material are found to outperform all other materials considered
用于弹道纳米级mosfet的新型通道材料-带结构效应
采用20波段sp3d5s*- so半经验原子紧密结合模型和顶垒半数值弹道输运模型研究了Si、Ge、GaAs和InAs通道材料的非应变n-和p- mosfet的性能极限。观察到,尽管深度缩放的III-V器件提供了很高的电子注入速度,但其极低的导带态密度严重降低了其性能。由于锗中电子和空穴的高态密度,以锗为通道材料的纳米级器件的性能优于所有其他材料
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