Self-aligned-gate GaN-HEMTs with heavily-doped n+-GaN ohmic contacts to 2DEG

K. Shinohara, D. Regan, A. Corrion, D. Brown, Y. Tang, J. Wong, G. Candia, A. Schmitz, H. Fung, S. Kim, M. Micovic
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引用次数: 87

Abstract

We report record DC and RF performance obtained in deeply-scaled self-aligned-gate GaN-HEMTs with heavily-doped n+-GaN ohmic contacts to two-dimensional electron-gas (2DEG). High density-of-states of three-dimensional (3D) n+-GaN source near the gate mitigates “source-starvation,” resulting in a dramatic increase in a maximum drain current (Idmax) and a transconductance (gm). 20-nm-gate D-mode HEMTs with a 40-nm gate-source (and gate-drain) distance exhibited a record-low Ron of 0.23 Ω·mm, a record-high Idmax of >4 A/mm, and a broad gm curve of >1 S/mm over a wide range of Ids from 0.5 to 3.5 A/mm. Furthermore, 20-nm-gate E-mode HEMTs with an increased Lsw of 70 nm demonstrated a simultaneous fT/fmax of 342/518 GHz with an off-state breakdown voltage of 14V.
具有高掺杂n+-GaN欧姆接触到2DEG的自对准栅gan - hemt
我们报告了在深度尺度自校准栅极gan - hemt中获得的创纪录的直流和射频性能,这些gan - hemt具有重掺杂的n+-GaN欧姆接触到二维电子-气体(2DEG)。栅极附近的三维(3D) n+-GaN源的高密度状态减轻了“源饥饿”,导致最大漏极电流(Idmax)和跨导(gm)的急剧增加。当栅极-源极(和栅极-漏极)距离为40 nm时,20 nm栅极d模hemt的Ron值最低,为0.23 Ω·mm; Idmax值最高,为>4 a /mm;在0.5 ~ 3.5 a /mm的宽Ids范围内,gm曲线宽,>1 S/mm。此外,Lsw增加到70 nm的20 nm栅极e模hemt的同时fT/fmax为342/518 GHz,断态击穿电压为14V。
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