Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)

Abstract

In this work, we report the first demonstration of GeSn pTFET. Good device characteristics were obtained. This may be attributed to direct BTBT, high hole mobility in the GeSn channel, and the formation of abruptly and heavily doped N+ source. The ION performance can be improved with further device optimization.