{"title":"Physical removal of nano-scale defects from surfaces","authors":"A. Busnaina, Hong Lin","doi":"10.1109/ASMC.2002.1001617","DOIUrl":null,"url":null,"abstract":"As semiconductor device feature size shrinks to 100 nm and smaller, the removal of nano-scale defects presents a tremendous challenge to the industry. There is a need to understand the particle removal mechanisms and recognize their advantages and limitations. In this paper, a particle removal model is modified to be able to consider soft particle deformation. The effect of decreasing particle size down to the nano-scale and its effect on the practical use of present techniques in the future is discussed. The way in which the megasonic-cleaning technique works to remove nano-scale particles from flat and structured surfaces is presented.","PeriodicalId":64779,"journal":{"name":"半导体技术","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"半导体技术","FirstCategoryId":"1087","ListUrlMain":"https://doi.org/10.1109/ASMC.2002.1001617","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18
Abstract
As semiconductor device feature size shrinks to 100 nm and smaller, the removal of nano-scale defects presents a tremendous challenge to the industry. There is a need to understand the particle removal mechanisms and recognize their advantages and limitations. In this paper, a particle removal model is modified to be able to consider soft particle deformation. The effect of decreasing particle size down to the nano-scale and its effect on the practical use of present techniques in the future is discussed. The way in which the megasonic-cleaning technique works to remove nano-scale particles from flat and structured surfaces is presented.