High mobility zinc oxynitride-TFT with operation stability under light-illuminated bias-stress conditions for large area and high resolution display applications

Abstract

We have investigated material and electrical properties of ZnON based on 1st principle calculations and TFT evaluations. Theoretically, ZnON has high mobility characteristics and band-structure for high stability. Fabricated TFTs exhibited high mobility (100 cm2/Vs), good uniformity, and stable operation performance such as -2.87 V of Vth-shift under light illuminated bias-stress condition. As a new approach to overcome the performance limit of oxide-semiconductors, ZnON technology is strongly promising to achieve high mobility and operation stability required for next generation displays.