A. Majumdar, S. Bangsaruntip, G. Cohen, L. Gignac, M. Guillorn, M. Frank, J. Sleight, D. Antoniadis
{"title":"Room-temperature carrier transport in high-performance short-channel Silicon nanowire MOSFETs","authors":"A. Majumdar, S. Bangsaruntip, G. Cohen, L. Gignac, M. Guillorn, M. Frank, J. Sleight, D. Antoniadis","doi":"10.1109/IEDM.2012.6479003","DOIUrl":null,"url":null,"abstract":"Room-temperature carrier transport in Si nanowire (NW) MOSFETs with gate lengths and diameters down to 25 and 8 nm, respectively, is analyzed. It is shown that in Si NWs, holes exhibit channel injection and thermal velocities, as high as the highest obtained for uniaxially strained planar Si-channel electrons, likely due to combination of strain and confinement.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2012.6479003","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 23
Abstract
Room-temperature carrier transport in Si nanowire (NW) MOSFETs with gate lengths and diameters down to 25 and 8 nm, respectively, is analyzed. It is shown that in Si NWs, holes exhibit channel injection and thermal velocities, as high as the highest obtained for uniaxially strained planar Si-channel electrons, likely due to combination of strain and confinement.