BF/sub 2//sup +/ implant: a fluorine bubble induced ET failure

C. Viera, B. Gurcan, K. Crocker, P. Todd, K. Lewis
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Abstract

Fluorine bubbles are a known result of BF/sub 2//sup +/ high energy implants. This work presents a failure mechanism induced by gross fluorine bubbles, that allows poly silicon to be damaged during its subsequent cobalt silicide etch. An alternative implant that includes both BF/sub 2//sup +/ and B11 may alleviate the effects of F precipitates without eliminating the benefits of BF/sub 2//sup +/ self-amorphizing the substrate.
BF/ sub2 /sup +/ implant:氟泡诱导ET失效
氟气泡是已知的BF/ sub2 /sup +/高能植入物的结果。这项工作提出了一种由总氟气泡引起的失效机制,使多晶硅在随后的硅化钴蚀刻过程中受到破坏。一种包括BF/sub 2//sup +/和B11的替代植入物可以减轻F沉淀的影响,而不会消除BF/sub 2//sup +/自非晶化基底的好处。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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