Development of compression molding process for Fan-Out wafer level packaging

Bertheau Julien, D. F.C, Kubota Tadashi, Bex Pieter, Kennes Koen, Phommahaxay Alain, Podpod Arnita, Beyne Eric, Miller Andy, Beyer Gerald
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引用次数: 5

Abstract

The present study deals with the investigation of compression mold processes and materials to enable a highdensity chip-first multi-die Fan-Out assembly. Wafer warpage, die shift and mold filling are investigated on 300mm wafers using various Epoxy Mold Compounds (EMC) with a target mold cap thickness of 200μm. Compression molding steps are first conducted on bare silicon, secondly on wafers coated with Temporary Bonding Material (TBM) and finally with populated dies on the TBM. The impact of TBM, and EMC materials along with Post-Mold-Cure (PMC) profiles have been explored in order to optimize the wafer warpage. The combination of the optimum material and process enabled ultra-low bow values below 200μm on 300mm silicon wafers. In addition, the ability for mold materials to fill narrow gaps specifics to Fan-out assemblies was also addressed. Furthermore, factors such as the die density and mold material distribution impact on die shift are also discussed.
扇出晶圆级封装压缩成型工艺的发展
本研究涉及压缩模具工艺和材料的调查,以实现高密度芯片优先的多模扇出组装。在目标模盖厚度为200μm的300mm晶圆上,采用不同的环氧模化合物(EMC)对晶圆翘曲、模移和充模进行了研究。首先在裸硅上进行压缩成型,然后在涂有临时粘合材料(TBM)的晶圆上进行压缩成型,最后在TBM上填充模具。为了优化晶圆翘曲,探讨了TBM和EMC材料以及模后固化(PMC)型材的影响。最佳材料和工艺的结合使300毫米硅晶圆上的超低弯曲值低于200μm。此外,还解决了模具材料填充扇形组件狭窄间隙的能力。此外,还讨论了模具密度和模具材料分布等因素对模移的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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