Fundamental Evaluation of Resist on EUV Lithography at NewSUBARU Synchrotron Light Facility

Abstract

Extreme ultraviolet lithography was started to use for the production of 7-nm node-logic-semiconductor devices in 2019. And it was adapted to use for high volume manufacturing (HVM) of 5-nm logic devices in 2020. EUVL is required to be extended to use in 1.5-nm-node-device fabrications. However, it still has many technical issues. Especially, for EUV resists, simultaneous achievement of high sensitivity and low line edge width are required. To solve the EUV resist issue, the fundamental work using synchrotron in soft X-ray region is necessary. The fundamental evaluation study of EUV resist at NewSUBARU synchrotron light facility is described in this paper.