CMOS interconnect transmission line measurements with new probe pad models

Abstract

In this paper, the complete models and measured results are presented for the probe pad in the CMOS on-wafer transmission line measurements using L-2L deembedding method. The transmission line parameters including characteristic impedance and propagation constant are acquired for broadband operation. The π-/T-network instead of the conventional shunt/series configuration for the probe pad are proposed with detail expressions for parameter extractions. Due to the under-determined condition for the parameter extraction, the iteration procedure is utilized. The measured results for the thin-film microstrip lines built by the 0.18 μm 1P6M process are shown from 0.2 GHz to 50 GHz.