Excellent resistance switching characteristics of Pt/SrTiO/sub 3/ schottky junction for multi-bit nonvolatile memory application

Abstract

We have investigated single crystal Nb-doped SrTiO₃ in terms of its potential utility in nonvolatile memory applications. Compared with polycrystalline oxide (Nb₂O₅, ZrO _x and Cr-SrTiO₃), the Pt/single crystal Nb:SrTiO ₃ Schottky junction exhibits excellent memory characteristics including uniformity of set/reset bias, die-to-die reproducibility, data retention at high temperature, reliability under cycle stress, and multi-bit operation characteristics. The switching mechanism might be explained by modulation of the Schottky barrier height by charge trapping at the interface