Study of piezoresistive properties of advanced CMOS transistors: Thin film SOI, SiGe/SOI, unstrained and strained Tri-Gate Nanowires

M. Cassé, S. Barraud, C. Le Royer, M. Koyama, R. Coquand, D. Blachier, F. Andrieu, G. Ghibaudo, O. Faynot, T. Poiroux, G. Reimbold
{"title":"Study of piezoresistive properties of advanced CMOS transistors: Thin film SOI, SiGe/SOI, unstrained and strained Tri-Gate Nanowires","authors":"M. Cassé, S. Barraud, C. Le Royer, M. Koyama, R. Coquand, D. Blachier, F. Andrieu, G. Ghibaudo, O. Faynot, T. Poiroux, G. Reimbold","doi":"10.1109/IEDM.2012.6479119","DOIUrl":null,"url":null,"abstract":"We hereby present an exhaustive extraction and study of piezoresitive (PR) coefficients in advanced CMOS transistors. In particular, we have evidenced the dependence with channel thickness and channel material compositions (SiGe with various Ge contents). Moreover we report for the first time the measurement of PR coefficient on uniaxially strained and unstrained Tri-Gate Nanowires transistors.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2012.6479119","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16

Abstract

We hereby present an exhaustive extraction and study of piezoresitive (PR) coefficients in advanced CMOS transistors. In particular, we have evidenced the dependence with channel thickness and channel material compositions (SiGe with various Ge contents). Moreover we report for the first time the measurement of PR coefficient on uniaxially strained and unstrained Tri-Gate Nanowires transistors.
先进CMOS晶体管的压阻特性研究:薄膜SOI, SiGe/SOI,非应变和应变三栅极纳米线
本文对先进CMOS晶体管的压敏系数进行了详尽的提取和研究。特别是,我们已经证明了沟道厚度和沟道材料成分(具有不同Ge含量的SiGe)的依赖性。此外,我们还首次报道了单轴应变和非应变三栅极纳米线晶体管的PR系数的测量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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