AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor

IF 4.5 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2000-02-01 DOI:10.1109/55.821668

M.A. Khan;X. Hu;G. Sumin;A. Lunev;J. Yang;R. Gaska;M.S. Shur

引用次数: 27

Abstract

We report on the AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor (MOS-HFET) and present the results of the comparative studies of this device and a base line AlGaN/GaN heterostructure field effect transistor (HFET). For a 5-μ source-to-drain opening, the maximum current was close to 600 mA/mm for both devices. The gate leakage current for the MOS-HFET was more than six orders of magnitude smaller than for the HFET.

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AlGaN/GaN金属氧化物半导体异质结构场效应晶体管

我们报道了AlGaN/GaN金属氧化物半导体异质结场效应晶体管（MOS-HFET），并介绍了该器件与基线AlGaN/GaN异质结场效晶体管（HFET）的比较研究结果。对于5μ源极到漏极的开口，两个器件的最大电流都接近600mA/mm。MOS-HFET的栅极泄漏电流比HFET的小六个数量级以上。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.