An Integration Technology for RF and Microwave Circuits Based on Interconnect Programming

Abstract

A configurable integration technology suitable for implementing application specific radio-frequency (RF) and microwave circuits is presented. This postfabrication integration scheme is compatible with complementary metal-oxide-semiconductor (CMOS) technology and utilizes room temperature deposited Parylene-N as low loss and low permittivity dielectric material. Interconnect lines, inductors, and transmission lines fabricated on top of arrays of prefabricated 0.13 ¿m and 90 nm CMOS transistors coated with Parylene-N are configured to design interconnect programmable RF and microwave circuits. The technology is used to demonstrate three proof of concept interconnect programmable narrowband amplifiers. These amplifiers have center frequencies of 5.5, 6.4, and 18 GHz with forward gain S21 of 16.6, 11, and 18.7 dB, respectively. Fabrication simplicity and programmable nature of this technology compared to standard application specific integrated circuit (ASIC) fabrication lowers the cost and time to market of individual ASIC chip.