π-Extended Zigzag-Shaped Diphenanthrene-Based p-Type Semiconductors Exhibiting Small Effective Masses

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Masato Mitani, Shohei Kumagai, Craig P. Yu, Ayako Oi, Masakazu Yamagishi, Shuhei Nishinaga, Hiroki Mori, Yasushi Nishihara, Daisuke Hashizume, Tadanori Kurosawa, Hiroyuki Ishii, Nobuhiko Kobayashi, Jun Takeya, Toshihiro Okamoto
{"title":"π-Extended Zigzag-Shaped Diphenanthrene-Based p-Type Semiconductors Exhibiting Small Effective Masses","authors":"Masato Mitani,&nbsp;Shohei Kumagai,&nbsp;Craig P. Yu,&nbsp;Ayako Oi,&nbsp;Masakazu Yamagishi,&nbsp;Shuhei Nishinaga,&nbsp;Hiroki Mori,&nbsp;Yasushi Nishihara,&nbsp;Daisuke Hashizume,&nbsp;Tadanori Kurosawa,&nbsp;Hiroyuki Ishii,&nbsp;Nobuhiko Kobayashi,&nbsp;Jun Takeya,&nbsp;Toshihiro Okamoto","doi":"10.1002/aelm.202200452","DOIUrl":null,"url":null,"abstract":"<p>Molecular design strategy of the π-electron core is of importance to enhance the organic semiconducting performance. In this study, diphenanthro[1,2-<i>b</i>:2′,1′-<i>d</i>]thiophene (DPT) as a new zigzag-shaped sulfur-bridged π-electron core and its phenyl-substituted derivative (Ph–DPT) exhibiting unique orbital configurations are reported. The DPT derivatives are readily synthesized through a versatile synthetic scheme in five steps from the commercially available dibenzothiophene. Their single-crystal structural analyses and band calculations revealed that both DPTs form typical herringbone packing structures, which are favorable for 2D charge carrier transport, along with small effective masses. Single-crystal-based field-effect transistors (FETs) of both DPT and Ph–DPT exhibit p-type behaviors and charge-carrier mobility up to 5.5 cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup>. These results provide information that can broaden the molecular design approaches toward high-performance organic semiconductors.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"8 11","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2022-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/aelm.202200452","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 1

Abstract

Molecular design strategy of the π-electron core is of importance to enhance the organic semiconducting performance. In this study, diphenanthro[1,2-b:2′,1′-d]thiophene (DPT) as a new zigzag-shaped sulfur-bridged π-electron core and its phenyl-substituted derivative (Ph–DPT) exhibiting unique orbital configurations are reported. The DPT derivatives are readily synthesized through a versatile synthetic scheme in five steps from the commercially available dibenzothiophene. Their single-crystal structural analyses and band calculations revealed that both DPTs form typical herringbone packing structures, which are favorable for 2D charge carrier transport, along with small effective masses. Single-crystal-based field-effect transistors (FETs) of both DPT and Ph–DPT exhibit p-type behaviors and charge-carrier mobility up to 5.5 cm2 V–1 s–1. These results provide information that can broaden the molecular design approaches toward high-performance organic semiconductors.

Abstract Image

有效质量小的π扩展之字形二菲基p型半导体
π电子核的分子设计策略对提高有机半导体性能具有重要意义。本文报道了一种新型的锯齿形硫桥π电子核的苯基取代衍生物(Ph-DPT)及其独特的轨道构型。DPT衍生物很容易通过一个通用的合成方案,在五个步骤,从市售的二苯并噻吩合成。他们的单晶结构分析和能带计算表明,这两种dpt都形成了典型的人字形填充结构,有利于二维电荷载流子的输运,并且有效质量较小。DPT和Ph-DPT的单晶场效应晶体管(fet)都表现出p型行为和高达5.5 cm2 V-1 s-1的载流子迁移率。这些结果提供的信息,可以拓宽分子设计方法向高性能有机半导体。
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来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
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