Effects of nano-silicon dioxide on minerals, antioxidant enzymes, and growth in bitter gourd seedlings under cadmium stress

IF 2.4 4区 生物学 Q2 PLANT SCIENCES
Hongyan Sun, Bo Zhang, Zhijiang Rong, Songjie He, Yifan Gao, Jia Yu, Qingmei Zhang
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引用次数: 0

Abstract

Heavy metal pollution has significant toxicity to plants, so it is necessary to take measures to reduce the toxicity of heavy metals, especially cadmium (Cd). While engineered nanomaterials provide great benefits in environmental remediation, and nano-silicon dioxide (nSiO2) has been considered as a potential new safer agrochemical for establishing plant resistance to Cd stress recently, but the systematically studies remain limited, especially in bitter gourd. The current study was conducted to study the mitigation effects and potential mechanism of exogenous nSiO2 upon Cd toxicity in bitter gourd seedlings. Generally, the application of nSiO2 reduced Cd concentrations in stems and roots. It mitigated Cd-induced root length, plant height, leaf area, and biomass inhibition in all tissues, with the mitigation effect of root length being the most obvious then followed by root dry weight (DW). In addition, exogenous nSiO2 affected the plant mineral elements’ balance, by stimulating leaf/root Zn, leaf/root Na, and Mg content, and depressing Cu, leaf Fe, leaf/root Ca, and stem Na content, in comparison with Cd treatment alone. Moreover, the supplementation of nSiO2 counteracted the changes of certain antioxidase induced by Cd, such as enhanced Cd depressed stem superoxide dismutase (SOD), and stem/root ascorbate peroxidase (APX), meanwhile reduced Cd elevated leaf SOD and peroxidase (POD) activities. In addition, exogenous nSiO2 obviously depressed the accumulation of malondialdehyde (MDA) induced by Cd stress. The results clearly showed that the mitigated Cd toxicity by nSiO2 addition was interrelated to the reduced MDA content and Cd concentration, balanced mineral element content and certain antioxidase activities, suggesting that nSiO2 might play a vital role in providing tolerance against Cd stress in bitter gourd seedlings.

Abstract Image

纳米二氧化硅对镉胁迫下苦瓜幼苗矿物质、抗氧化酶及生长的影响
重金属污染对植物具有显著的毒性,因此有必要采取措施降低重金属特别是镉的毒性。虽然工程纳米材料在环境修复中具有巨大的优势,纳米二氧化硅(nSiO2)最近被认为是一种潜在的新的更安全的农用化学品,可以建立植物对镉胁迫的抗性,但系统的研究仍然有限,尤其是在苦瓜中。本研究旨在研究外源nSiO2对苦瓜幼苗镉毒性的缓解作用及其潜在机制。一般来说,nSiO2的施用降低了茎和根中的Cd浓度。它减轻了镉诱导的根长、株高、叶面积和各组织生物量的抑制,其中根长的缓解效果最明显,其次是根干重。此外,与单独镉处理相比,外源nSiO2通过刺激叶/根Zn、叶/根Na和Mg含量,降低Cu、叶Fe、叶/根Ca和茎Na含量,影响植物矿质元素平衡。此外,补充nSiO2可以抵消镉诱导的某些抗氧化酶的变化,如增强镉抑制的茎超氧化物歧化酶(SOD)和茎/根抗坏血酸过氧化物酶(APX),同时降低镉升高的叶片SOD和过氧化物酶(POD)活性。此外,外源nSiO2对镉胁迫诱导的丙二醛(MDA)的积累有明显的抑制作用。结果表明,添加nSiO2可减轻苦瓜幼苗对镉的毒性,这与降低MDA含量和镉浓度、平衡矿物质元素含量和一定的抗氧化酶活性有关,表明nSiO2可能在苦瓜幼苗抗镉胁迫中发挥重要作用。
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来源期刊
Acta Physiologiae Plantarum
Acta Physiologiae Plantarum 生物-植物科学
CiteScore
5.10
自引率
3.80%
发文量
125
审稿时长
3.1 months
期刊介绍: Acta Physiologiae Plantarum is an international journal established in 1978 that publishes peer-reviewed articles on all aspects of plant physiology. The coverage ranges across this research field at various levels of biological organization, from relevant aspects in molecular and cell biology to biochemistry. The coverage is global in scope, offering articles of interest from experts around the world. The range of topics includes measuring effects of environmental pollution on crop species; analysis of genomic organization; effects of drought and climatic conditions on plants; studies of photosynthesis in ornamental plants, and more.
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