Fabrication and characterization of field-effect transistors based on MoS2 nanotubes prepared in anodic aluminum oxide templates

Abstract

Field-effect transistors (FETs) based on MoS₂ nanotubes prepared in anodic aluminum oxide (AAO) templates have been fabricated and demonstrated in this work. MoS₂ nanotubes were prepared by the thermal decomposition of (NH₄)₂MoS₄ precursors in the AAO template. The diameter of the MoS₂ nanotubes was approximately 80 nm, which corresponded to the size of the AAO template. Schottky-type FETs were prepared with Au and Pt electrodes, and the FETs exhibited n-type behavior, with on/off ratios that exceeded 10³ at V_SD = 0.5 V.