Hong‐Sun Yoon, Min Park, J. Yook, Dongsu Kim, Youngcheol Park
{"title":"Compact Asymmetrical Quasi-MMIC Doherty Power Amplifier","authors":"Hong‐Sun Yoon, Min Park, J. Yook, Dongsu Kim, Youngcheol Park","doi":"10.26866/jees.2023.4.l.15","DOIUrl":null,"url":null,"abstract":"This paper presents a compact asymmetrical Doherty power amplifier (PA) based on a quasi-MMIC configuration for 5G sub-6 GHz applications. The proposed Doherty PA is composed of commercial GaN HEMTs and several passive components implemented on a silicon (Si) substrate. In order to achieve size and cost advantages, passive components such as a power divider, input matching networks, output matching networks, and a Doherty combiner are realized using Si-integrated passive device (Si-IPD) technology, which costs about 40% of the budget for the entire GaN MMIC process. For the 3.5 GHz pulsed-continuous waveform signal, the fabricated Doherty PA has an efficiency of 52.6% at a saturated output power of 44.2 dBm. Furthermore, an efficiency of 45.6% was achieved with the output power back-off (OBO) of 7.0 dB. The implemented PA occupies only 8.9 mm × 5.6 mm.","PeriodicalId":15662,"journal":{"name":"Journal of electromagnetic engineering and science","volume":null,"pages":null},"PeriodicalIF":1.6000,"publicationDate":"2023-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of electromagnetic engineering and science","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.26866/jees.2023.4.l.15","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents a compact asymmetrical Doherty power amplifier (PA) based on a quasi-MMIC configuration for 5G sub-6 GHz applications. The proposed Doherty PA is composed of commercial GaN HEMTs and several passive components implemented on a silicon (Si) substrate. In order to achieve size and cost advantages, passive components such as a power divider, input matching networks, output matching networks, and a Doherty combiner are realized using Si-integrated passive device (Si-IPD) technology, which costs about 40% of the budget for the entire GaN MMIC process. For the 3.5 GHz pulsed-continuous waveform signal, the fabricated Doherty PA has an efficiency of 52.6% at a saturated output power of 44.2 dBm. Furthermore, an efficiency of 45.6% was achieved with the output power back-off (OBO) of 7.0 dB. The implemented PA occupies only 8.9 mm × 5.6 mm.
期刊介绍:
The Journal of Electromagnetic Engineering and Science (JEES) is an official English-language journal of the Korean Institute of Electromagnetic and Science (KIEES). This journal was launched in 2001 and has been published quarterly since 2003. It is currently registered with the National Research Foundation of Korea and also indexed in Scopus, CrossRef and EBSCO, DOI/Crossref, Google Scholar and Web of Science Core Collection as Emerging Sources Citation Index(ESCI) Journal. The objective of JEES is to publish academic as well as industrial research results and discoveries in electromagnetic engineering and science. The particular scope of the journal includes electromagnetic field theory and its applications: High frequency components, circuits, and systems, Antennas, smart phones, and radars, Electromagnetic wave environments, Relevant industrial developments.