Defected microstrip structure-based near-end and far-end crosstalk mitigation in high-speed PCBs for mixed signals

IF 0.7 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Y. V., G. Alsath, M. Kanagasabai
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引用次数: 1

Abstract

Purpose The design, fabrication and experimental validation of defected microstrip structure (DMS) are proposed to address the problem of near-end crosstalk (NEXT) and far-end crosstalk (FEXT) between the microstrip transmission lines in a printed circuit board. Design/methodology/approach The proposed DMS evolved with the combination of spur line (L-shaped DMS) and U-shaped DMS topologies. This technique reduces the strength of electromagnetic coupling and suppresses crosstalk by optimizing the capacitive and inductive coupling ratio between the linked microstrip lines. The practical inductance value is much more significant in DMS than in defected ground structures (DGS), but the capacitance value remains the same. Findings A DMS unit is etched on the aggressor microstrip line instead of the DGS circuit. Because there is no leakage via the ground plane and the circuit size is far smaller than with DGS, the enclosure issue is disregarded. DMS structures have a larger effective inductance and are resistant to electromagnetic interference. A tightly coupled transmission line structure with minimal separation between the coupled microstrip line is designed using DMS. Further research must be conducted to improve the NEXT, FEXT and spacing between the transmission lines. Originality/value Simulation and actual measurement results show that the proposed DMS structure can effectively suppress crosstalk by analysing the S-parameters, namely, S_12, S_13 and S_14, with measured values of 1.48 dB, 20.65 dB and 21.099 dB, respectively. The data rate is measured to be 1.34 Gbps as per the eye diagram characterization. The results show that the NEXT and FEXT are reduced by approximately 20 dB in the frequency range of 1–11 GHz for mixed signals. The substantial measured results in the vector network analyser coincide with the computer simulation technology microwave studio suite simulation results.
基于缺陷微带结构的混合信号高速pcb近端和远端串扰抑制
目的为了解决印刷电路板中微带传输线之间的近端串扰(NEXT)和远端串扰(FEXT)问题,提出了缺陷微带结构(DMS)的设计、制造和实验验证。设计/方法/方法拟议的DMS结合了支线(L形DMS)和U形DMS拓扑结构。该技术通过优化连接的微带线之间的电容和电感耦合比来降低电磁耦合强度并抑制串扰。与缺陷接地结构(DGS)相比,DMS中的实际电感值要显著得多,但电容值保持不变。发现DMS单元被蚀刻在侵略微带线上而不是DGS电路上。由于接地平面没有泄漏,且电路尺寸远小于DGS,因此忽略了外壳问题。DMS结构具有更大的有效电感并且抗电磁干扰。使用DMS设计了一种耦合微带线之间间隔最小的紧密耦合传输线结构。必须进行进一步的研究以改善NEXT、FEXT和传输线之间的间距。原创性/价值仿真和实际测量结果表明,通过分析S参数S_12、S_13和S_14,所提出的DMS结构可以有效地抑制串扰,测量值为1.48 dB,20.65 dB和21.099 dB。根据眼图特征,数据速率被测量为1.34Gbps。结果表明,NEXT和FEXT减少了大约20 频率范围为1-11的dB GHz用于混合信号。矢量网络分析仪中的大量测量结果与计算机模拟技术微波工作室套件的模拟结果一致。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Microelectronics International
Microelectronics International 工程技术-材料科学:综合
CiteScore
1.90
自引率
9.10%
发文量
28
审稿时长
>12 weeks
期刊介绍: Microelectronics International provides an authoritative, international and independent forum for the critical evaluation and dissemination of research and development, applications, processes and current practices relating to advanced packaging, micro-circuit engineering, interconnection, semiconductor technology and systems engineering. It represents a current, comprehensive and practical information tool. The Editor, Dr John Atkinson, welcomes contributions to the journal including technical papers, research papers, case studies and review papers for publication. Please view the Author Guidelines for further details. Microelectronics International comprises a multi-disciplinary study of the key technologies and related issues associated with the design, manufacture, assembly and various applications of miniaturized electronic devices and advanced packages. Among the broad range of topics covered are: • Advanced packaging • Ceramics • Chip attachment • Chip on board (COB) • Chip scale packaging • Flexible substrates • MEMS • Micro-circuit technology • Microelectronic materials • Multichip modules (MCMs) • Organic/polymer electronics • Printed electronics • Semiconductor technology • Solid state sensors • Thermal management • Thick/thin film technology • Wafer scale processing.
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