Investigation of a minority carrier trap in a NiO/β-Ga2O3 p–n heterojunction via deep-level transient spectroscopy

IF 1.9 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Haolan Qu, Jiaxiang Chen, Yu Zhang, Jin-chi Sui, Ruohan Zhang, Junmin Zhou, Xing Lu, Xinbo Zou
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引用次数: 0

Abstract

The properties of a minority carrier (hole) trap in β-Ga2O3 have been explicitly investigated using a NiO/β-Ga2O3 p–n heterojunction. Via deep-level transient spectroscopy, the activation energy for emission (E emi) and the hole capture cross section (σp ) were derived to be 0.10 eV and 2.48 × 10−15 cm2, respectively. Temperature-enhanced capture and emission kinetics were revealed by the decrease in the capture time constant (τc ) and emission time constant (τe ). Moreover, it was determined that the emission process of the minority carrier trap is independent of the electric field. Taking carrier recombination into account, a corrected trap concentration (N Ta) of 2.73 × 1015 cm−3 was extracted, together with an electron capture cross section (σn ) of 1.42 × 10−18 cm2. This study provides a foundation for the comprehension of trap properties in β-Ga2O3, which is crucial for overcoming self-trapped hole effects when obtaining p-type β-Ga2O3 materials and performance enhancement of β-Ga2O3-based power devices.
用深能级瞬态光谱研究NiO/β-Ga2O3 p-n异质结中的少数载流子陷阱
使用NiO/β-Ga2O3 p–n异质结明确研究了β-Ga203中少数载流子(空穴)陷阱的性质。通过深能级瞬态光谱,得出发射激活能(E emi)和空穴捕获截面(σp)分别为0.10 eV和2.48×10−15 cm2。捕获时间常数(τc)和发射时间常数(Tae)的降低揭示了温度增强的捕获和发射动力学。此外,还确定了少数载流子陷阱的发射过程与电场无关。考虑到载流子复合,提取了2.73×1015 cm−3的校正陷阱浓度(N Ta),以及1.42×10−18 cm2的电子捕获截面(σN)。该研究为理解β-Ga2O3中的陷阱性质提供了基础,这对于在获得p型β-Ga203材料时克服自陷阱空穴效应和提高β-Ga2O3基功率器件的性能至关重要。
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来源期刊
Semiconductor Science and Technology
Semiconductor Science and Technology 工程技术-材料科学:综合
CiteScore
4.30
自引率
5.30%
发文量
216
审稿时长
2.4 months
期刊介绍: Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.
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