Investigation of a minority carrier trap in a NiO/β-Ga2O3 p–n heterojunction via deep-level transient spectroscopy

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Semiconductor Science and Technology Pub Date : 2023-09-01 DOI:10.1088/1361-6641/acf608

Haolan Qu, Jiaxiang Chen, Yu Zhang, Jin-chi Sui, Ruohan Zhang, Junmin Zhou, Xing Lu, Xinbo Zou

{"title":"Investigation of a minority carrier trap in a NiO/β-Ga2O3 p–n heterojunction via deep-level transient spectroscopy","authors":"Haolan Qu, Jiaxiang Chen, Yu Zhang, Jin-chi Sui, Ruohan Zhang, Junmin Zhou, Xing Lu, Xinbo Zou","doi":"10.1088/1361-6641/acf608","DOIUrl":null,"url":null,"abstract":"The properties of a minority carrier (hole) trap in β-Ga2O3 have been explicitly investigated using a NiO/β-Ga2O3 p–n heterojunction. Via deep-level transient spectroscopy, the activation energy for emission (E emi) and the hole capture cross section (σp ) were derived to be 0.10 eV and 2.48 × 10−15 cm2, respectively. Temperature-enhanced capture and emission kinetics were revealed by the decrease in the capture time constant (τc ) and emission time constant (τe ). Moreover, it was determined that the emission process of the minority carrier trap is independent of the electric field. Taking carrier recombination into account, a corrected trap concentration (N Ta) of 2.73 × 1015 cm−3 was extracted, together with an electron capture cross section (σn ) of 1.42 × 10−18 cm2. This study provides a foundation for the comprehension of trap properties in β-Ga2O3, which is crucial for overcoming self-trapped hole effects when obtaining p-type β-Ga2O3 materials and performance enhancement of β-Ga2O3-based power devices.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":" ","pages":""},"PeriodicalIF":1.9000,"publicationDate":"2023-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Science and Technology","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1088/1361-6641/acf608","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

The properties of a minority carrier (hole) trap in β-Ga2O3 have been explicitly investigated using a NiO/β-Ga2O3 p–n heterojunction. Via deep-level transient spectroscopy, the activation energy for emission (E emi) and the hole capture cross section (σp ) were derived to be 0.10 eV and 2.48 × 10−15 cm2, respectively. Temperature-enhanced capture and emission kinetics were revealed by the decrease in the capture time constant (τc ) and emission time constant (τe ). Moreover, it was determined that the emission process of the minority carrier trap is independent of the electric field. Taking carrier recombination into account, a corrected trap concentration (N Ta) of 2.73 × 1015 cm−3 was extracted, together with an electron capture cross section (σn ) of 1.42 × 10−18 cm2. This study provides a foundation for the comprehension of trap properties in β-Ga2O3, which is crucial for overcoming self-trapped hole effects when obtaining p-type β-Ga2O3 materials and performance enhancement of β-Ga2O3-based power devices.

查看原文本刊更多论文

用深能级瞬态光谱研究NiO/β-Ga2O3 p-n异质结中的少数载流子陷阱

使用NiO/β-Ga2O3 p–n异质结明确研究了β-Ga203中少数载流子（空穴）陷阱的性质。通过深能级瞬态光谱，得出发射激活能（E emi）和空穴捕获截面（σp）分别为0.10 eV和2.48×10−15 cm2。捕获时间常数（τc）和发射时间常数（Tae）的降低揭示了温度增强的捕获和发射动力学。此外，还确定了少数载流子陷阱的发射过程与电场无关。考虑到载流子复合，提取了2.73×1015 cm−3的校正陷阱浓度（N Ta），以及1.42×10−18 cm2的电子捕获截面（σN）。该研究为理解β-Ga2O3中的陷阱性质提供了基础，这对于在获得p型β-Ga203材料时克服自陷阱空穴效应和提高β-Ga2O3基功率器件的性能至关重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Semiconductor Science and Technology 工程技术-材料科学：综合

CiteScore

4.30

自引率

5.30%

发文量

216

审稿时长

2.4 months

期刊介绍： Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.