Rubidium fluoride additive for high-efficiency and low-hysteresis all-inorganic CsPbI3 perovskite solar cells

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Semiconductor Science and Technology Pub Date : 2023-08-25 DOI:10.1088/1361-6641/acf406

Dan Zhang, Chun-ping Chen, M. Ren, Kewang Shi, Jin Huang

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引用次数: 0

Abstract

All-inorganic CsPbI3 perovskite solar cells (PSCs) technology is gradually maturing because of its excellent photoelectric characteristics. However, the hysteresis phenomenon induced by ion migration in the perovskite film not only seriously affects the performance of the device, but also accelerates the degradation of the film, which limits the further improvement of power conversion efficiency (PCE) for CsPbI3 PSCs. Herein, in this paper, a new inorganic fluorine-containing additive rubidium fluoride (RbF) was introduced as a precursor additive. The incorporation of RbF effectively improved the crystallization kinetics of CsPbI3 perovskite film and effectively suppressed the occurrence of hysteresis. The defects on the CsPbI3 perovskite film are remarkably inhibited and the carrier dynamics process is greatly promoted with the incorporation of 0.03 mol% RbF. In addition, the non-radiative recombination is significantly suppressed, and the device stability is substantially improved. In particular, by doping 0.03 mol% RbF into the CsPbI3, the hysteresis index of PSCs decreases to 0.003. The introduction of RbF effectively improves the device performance, and the highest efficiency has reached to 17.21%. The environmental stability has also been significantly enhanced with the RbF doping.

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高效低磁滞全无机CsPbI3钙钛矿太阳能电池用氟化铷添加剂

全无机CsPbI3钙钛矿太阳能电池（PSC）技术因其优异的光电特性而逐渐成熟。然而，离子迁移在钙钛矿薄膜中引起的磁滞现象不仅严重影响了器件的性能，而且加速了薄膜的退化，这限制了CsPbI3 PSCs功率转换效率（PCE）的进一步提高。本文介绍了一种新型无机含氟添加剂氟化铷（RbF）作为前驱体添加剂。RbF的引入有效地改善了CsPbI3钙钛矿膜的结晶动力学，并有效地抑制了磁滞现象的发生。0.03mol%RbF的引入显著抑制了CsPbI3钙钛矿膜上的缺陷，并大大促进了载流子动力学过程。此外，非辐射复合被显著抑制，并且器件稳定性显著提高。特别地，通过将0.03mol%RbF掺杂到CsPbI3中，PSC的磁滞指数降低到0.003。RbF的引入有效地提高了器件性能，最高效率达到17.21%。RbF掺杂也显著增强了环境稳定性。

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来源期刊

Semiconductor Science and Technology 工程技术-材料科学：综合

CiteScore

4.30

自引率

5.30%

发文量

216

审稿时长

2.4 months

期刊介绍： Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.