Study and characterization of the nanotextured Ga2O3-GaOOH formations synthesized via thermal oxidation of GaAs in ambient air

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Semiconductor Science and Technology Pub Date : 2023-08-22 DOI:10.1088/1361-6641/acf2be

H.I. Solís-Cisneros, H. Vilchis, Raúl Hernández-Trejo, Ana L. Melchor-Tovilla, Á. Guillén-Cervantes, Carlos A Hernández Gutiérrez

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Abstract

In this work, we present the characterization of a UV-sensitive material based on Ga2O3-GaOOH, which was obtained through the thermal oxidation of GaAs wafers in ambient air to achieve Ga2O3. The material’s oxidation mechanism was thoroughly examined using structural, compositional, and optical approaches. X-ray diffraction analysis identified the presence of the β-Ga2O3 crystalline phase, with both in-plane and out-of-plane preferred orientations, along with crystalline inclusions attributed to GaOOH. Furthermore, energy-dispersive spectroscopy confirmed the uniform sublimation of Arsenic, as evidenced by elemental mapping, while Fourier-transform infrared spectroscopy suggested the inclusion of −OH bonds. Surface analysis was carried out by field emission scanning electron microscopy and atomic force microscopy, revealing a grain size of approximately 20 nm. Finally, UV-Vis characterization unveiled a bandgap ranging from 2.9 to 3.9 eV, indicative of the material’s potential for UV-sensitive applications. Overall, the results demonstrate the consistency and reliability of the oxidation process, providing valuable insights into the properties of the Ga2O3-GaOOH material for potential technological advancements.

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环境空气中GaAs热氧化合成纳米结构Ga2O3-GaOOH的研究与表征

在这项工作中，我们介绍了一种基于Ga2O3-GaOOH的紫外线敏感材料的特性，该材料是通过在环境空气中对GaAs晶片进行热氧化以获得Ga2O3而获得的。使用结构、组成和光学方法对材料的氧化机理进行了彻底的研究。X射线衍射分析确定了β-Ga2O3晶相的存在，具有平面内和平面外的优选取向，以及归因于GaOOH的晶体夹杂物。此外，能量色散光谱证实了砷的均匀升华，如元素映射所证明的，而傅里叶变换红外光谱表明包含−OH键。通过场发射扫描电子显微镜和原子力显微镜进行表面分析，发现晶粒尺寸约为20nm。最后，UV-Vis表征揭示了2.9至3.9 eV的带隙，表明该材料在紫外线敏感应用中的潜力。总的来说，这些结果证明了氧化过程的一致性和可靠性，为潜在的技术进步提供了对Ga2O3-GaOOH材料性能的有价值的见解。

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来源期刊

Semiconductor Science and Technology 工程技术-材料科学：综合

CiteScore

4.30

自引率

5.30%

发文量

216

审稿时长

2.4 months

期刊介绍： Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.