Influences of lattice strain and SiGe buffer layer thickness on electrical characteristics of strained Si/SiGe/Si(110) heterostructures

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2023-07-01 DOI:10.1016/j.mssp.2023.107476

Taisuke Fujisawa , Atsushi Onogawa , Miki Horiuchi , Yuichi Sano , Chihiro Sakata , Junji Yamanaka , Kosuke O. Hara , Kentarou Sawano , Kiyokazu Nakagawa , Keisuke Arimoto

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引用次数: 0

Abstract

In previous studies, we reported on significantly high hole mobility in a strained Si/SiGe/Si(110) heterostructure pMOSFET. In this study, we investigated impact of strain on the hole mobility in this structure. 20-nm thick (110)-oriented strained Si films with different strain levels were formed using solid-source molecular beam epitaxy. A positive correlation between the hole mobility and the strain of the Si layer is verified. It is also shown that formation of growth twins and strain relaxation of SiGe layer in the $[\overline{1} 10]$ direction deteriorate the hole mobility. The maximum mobility enhancement factor obtained in this study is about 3. In addition, the influence of the SiGe layer thickness on the off-state leakage current in pMOSFET operation is discussed. It is found that the upper part of the thick SiGe samples includes cause of the leakage current, indicating change of conductivity with the progress of the crystal growth of SiGe layer. This phenomenon is related to the formation process of the crystalline defects. Another finding is the existence of a current path through the substrate, which suggests a defect-assisted current flow across the SiGe/n-Si(110) junction.

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晶格应变和SiGe缓冲层厚度对应变Si/SiGe/Si(110)异质结构电特性的影响

在之前的研究中，我们报道了应变Si/SiGe/Si(110)异质结构pMOSFET的高空穴迁移率。在这项研究中，我们研究了应变对这种结构中空穴迁移率的影响。采用固体源分子束外延技术制备了不同应变水平的20 nm厚(110)取向应变Si薄膜。验证了硅层应变与空穴迁移率呈正相关关系。研究还表明，SiGe层在[1 - 10]方向上的生长孪晶的形成和应变松弛使空穴迁移率恶化。本研究获得的最大迁移率增强因子约为3。此外，还讨论了SiGe层厚度对pMOSFET工作时漏电流的影响。发现厚SiGe样品的上部包含泄漏电流的原因，表明电导率随SiGe层晶体生长的进展而变化。这种现象与晶体缺陷的形成过程有关。另一个发现是通过衬底存在电流路径，这表明缺陷辅助电流流过SiGe/n-Si(110)结。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.