Investigating the Core Parameters to Fabricate V-Shaped Diffraction Grating via MA-P 1215 Positive Photoresist

IF 0.9 4区 材料科学
Y. Al‐Hadeethi, A. Al-Mujtabi, Alaa Y. Mahmoud, M. Alotaibi
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Abstract

In this study, the core deposition parameters for the MA-P1215 positive photoresist, namely; spin-coating speed, baking temperature and exposure fluence, have been investigated and optimized using a mask aligner, thermogravimetric and a spectroscopic ellipsometry. The optical properties, specifically, the refractive index n and extinction coefficient k for the films have been calculated via changing the fluence of the energy. The reduction in the thickness of the films with the increase in the spin-coater speed reflects the low viscosity of the MA-P photoresist. The relation between the weight reduction of the film via baking temperature and time reveals that the optimized baking temperature is 120 °C for 2 min, in which the weight of the film is reduced by 51%. We found that the values of both n and k depend on the exposure fluence. At small fluence values, both n and k decreased linearly with the increase in the wavelength. However, by increasing the fluence, the values of n and k became like those for silicon wafer, revealing that the developed film was totally removed. The contrast curve shows a decrease in the film thickness when the fluence of the exposure is increased, and the optimized fluence is found to be 35 mJ/cm2.
MA-P1215正性光刻胶制备V形衍射光栅的核心参数研究
在本研究中,核心沉积参数为MA-P1215正性光刻胶,即:;利用掩模对准仪、热重分析仪和椭圆光谱分析仪对旋涂速度、烘焙温度和曝光通量进行了研究和优化。通过改变能量的注量,计算了薄膜的光学性质,特别是折射率n和消光系数k。随着旋涂机速度的增加,膜厚度的减小反映了MA-P光致抗蚀剂的低粘度。通过烘烤温度和时间降低薄膜重量的关系表明,最佳烘烤温度为120°C,烘烤2分钟,薄膜重量降低了51%。我们发现,n和k的值都取决于曝光通量。在较小的注量值下,n和k都随着波长的增加而线性下降。然而,通过增加注量,n和k的值变得与硅片的值相似,表明显影的膜被完全去除。对比度曲线显示当曝光的注量增加时膜厚度减小,并且发现优化的注量为35mJ/cm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Science of Advanced Materials
Science of Advanced Materials NANOSCIENCE & NANOTECHNOLOGY-MATERIALS SCIENCE, MULTIDISCIPLINARY
自引率
11.10%
发文量
98
审稿时长
4.4 months
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