Analysis of surface properties of Mg doped ZnS and ZnSe thin films through x-ray photoelectron spectroscopy

IF 1.8 4区 物理与天体物理 Q2 SPECTROSCOPY
V.S. Ganesha Krishna, M.G. Mahesha
{"title":"Analysis of surface properties of Mg doped ZnS and ZnSe thin films through x-ray photoelectron spectroscopy","authors":"V.S. Ganesha Krishna,&nbsp;M.G. Mahesha","doi":"10.1016/j.elspec.2023.147341","DOIUrl":null,"url":null,"abstract":"<div><p>The surface properties of the spray-deposited Mg-doped ZnS and ZnSe films were investigated using X-ray photoelectron spectroscopy (XPS). The energy levels of the core electrons in ZnMgS and ZnMgSe, their peak positions, area ratios, and full width at half maximum were determined. Chemical shifts in Auger peaks, which are highly sensitive to changes in the chemical environment were used in the analysis. Compositional analysis indicated selenium deficiency in the ZnMgSe films. XPS peak of magnesium 2p showed a shift from 50.46 eV for ZnMgSe film to 50.63 eV for ZnMgS film and Mg 2s peak shift from 86.56 eV for ZnMgSe to 87.64 eV for ZnMgS films. A careful justification for the formation of oxides in the ZnMgSe films is also given. Ionicity for both films is about 0.51. Peak shifts in the Auger and core-level peaks are used to analyze the material's bonding strength, oxidation states, and bonding types.</p></div>","PeriodicalId":15726,"journal":{"name":"Journal of Electron Spectroscopy and Related Phenomena","volume":"266 ","pages":"Article 147341"},"PeriodicalIF":1.8000,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electron Spectroscopy and Related Phenomena","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0368204823000580","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"SPECTROSCOPY","Score":null,"Total":0}
引用次数: 1

Abstract

The surface properties of the spray-deposited Mg-doped ZnS and ZnSe films were investigated using X-ray photoelectron spectroscopy (XPS). The energy levels of the core electrons in ZnMgS and ZnMgSe, their peak positions, area ratios, and full width at half maximum were determined. Chemical shifts in Auger peaks, which are highly sensitive to changes in the chemical environment were used in the analysis. Compositional analysis indicated selenium deficiency in the ZnMgSe films. XPS peak of magnesium 2p showed a shift from 50.46 eV for ZnMgSe film to 50.63 eV for ZnMgS film and Mg 2s peak shift from 86.56 eV for ZnMgSe to 87.64 eV for ZnMgS films. A careful justification for the formation of oxides in the ZnMgSe films is also given. Ionicity for both films is about 0.51. Peak shifts in the Auger and core-level peaks are used to analyze the material's bonding strength, oxidation states, and bonding types.

Mg掺杂ZnS和ZnSe薄膜表面性质的x射线光电子能谱分析
利用x射线光电子能谱(XPS)研究了喷镀mg掺杂ZnS和ZnSe薄膜的表面性质。测定了znmggs和ZnMgSe中核心电子的能级、峰位、面积比和半最大值时的全宽度。在分析中使用了对化学环境变化高度敏感的俄歇峰的化学位移。组分分析表明,ZnMgSe薄膜缺硒。镁2p的XPS峰由ZnMgSe膜的50.46 eV位移到znmggs膜的50.63 eV,镁2s的XPS峰由ZnMgSe膜的86.56 eV位移到znmggs膜的87.64 eV。对ZnMgSe薄膜中氧化物的形成进行了详细的论证。两种薄膜的离子度均约为0.51。螺旋钻和芯级峰的峰移用于分析材料的结合强度、氧化态和结合类型。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
CiteScore
3.30
自引率
5.30%
发文量
64
审稿时长
60 days
期刊介绍: The Journal of Electron Spectroscopy and Related Phenomena publishes experimental, theoretical and applied work in the field of electron spectroscopy and electronic structure, involving techniques which use high energy photons (>10 eV) or electrons as probes or detected particles in the investigation.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信