Self-host homoleptic green iridium dendrimers based on diphenylamine dendrons for highly efficient single-layer PhOLEDs†

IF 5.7 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Wenwen Tian, Chang Yi, Bo Song, Qi Qi, Wei Jiang, Yingping Zheng, Zhengjian Qi and Yueming Sun
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引用次数: 37

Abstract

The fabrication of electroluminescent devices that combine high device performance with simple device configuration remains an attractive challenge due to their low cost and simple fabrication processes. In this paper, a new series of electrophosphorescent small molecule iridium(III) complexes with diphenylamine-based dendrons of good solubility have been designed. The relationships between their dendritic structures and their photophysical, electrochemical, and electrophosphorescent performances have been systematically investigated. With second-generation dendrons, the photoluminescence quantum yields of the neat film of the dendrimers are almost seven times higher than that of their prototype G0 (Ir(LG0)3, LG0 = 1-methyl-2-phenyl-1H-benzimidazole), and three times that of the first-generation dendron G1 (Ir(LG1)3, LG1 = 4-(1-methyl-1H-benzimidazol-2-yl)-N,N-diphenylbenzenamine). High-quality films of the dendrimers G2 (Ir(LG2)3, LG2 = 1-methyl-2-[4-bis[4-(diphenylamino)phenyl]-aminophenyl]-1H-benzimidazole) and G2Cz (Ir(LG2Cz)3, LG2Cz = 1-methyl-2-[4-bis[4-(9-carbazolyl)phenyl]-aminophenyl]-1H-benzimidazole) have been fabricated by spin-coating, producing highly efficient, non-doped phosphorescent organic light-emitting diodes (PhOLEDs). With a device structure of indium tin oxide/poly(3,4-ethylene-dioxythiophene):poly(styrene sulfonic acid)/neat dendrimer/Cs2CO3/Al, maximum luminous efficiencies of 14.02 cd A?1 and 18.35 cd A?1 have been realized, exhibiting ultrahigh luminous efficiency for single-layer self-host green PhOLEDs. The excellent performances are due to the flower bouquet-shaped iridium dendrimers, which may improve the electron injection and result in greater balance between electron and hole fluxes by the exposure of electron-deficient moieties. The molecular design reported here provides a simple and effective approach to balance charge injection/transporting capacities and develops highly efficient non-doped phosphors suitable for low-cost single-layer device technologies.

Abstract Image

基于二苯胺树突的自寄主同感绿铱树状大分子用于高效单层光电二极管†
由于其低成本和简单的制造工艺,结合高器件性能和简单器件配置的电致发光器件的制造仍然是一个有吸引力的挑战。本文设计了一系列具有良好溶解度的二苯胺基树突的电磷光小分子铱配合物。它们的树突结构与其光物理、电化学和电磷光性能之间的关系已被系统地研究。对于第二代树突,整齐薄膜的光致发光量子产率几乎是其原型G0 (Ir(LG0)3, LG0 = 1-甲基-2-苯基- 1h -苯并咪唑)的7倍,是第一代树突G1 (Ir(LG1)3, LG1 = 4-(1-甲基- 1h -苯并咪唑-2-基)- n, n -二苯基苯胺)的3倍。采用自旋镀膜法制备了高质量的树状大分子G2 (Ir(LG2)3, LG2 = 1-甲基-2-[4-双[4-(二苯基)苯基]-氨基苯基]- 1h -苯并咪唑)和G2Cz (Ir(LG2Cz)3, LG2Cz = 1-甲基-2-[4-双[4-(9-咔唑基)苯基]-氨基苯基]- 1h -苯并咪唑)薄膜,制备了高效、无掺杂的磷光有机发光二极管(PhOLEDs)。器件结构为氧化铟锡/聚(3,4-乙烯-二氧噻吩):聚(苯乙烯磺酸)/整齐树突状聚合物/Cs2CO3/Al,最大发光效率为14.02 cd a ?1和18.35 cd A?1的实现,显示出单层自宿主绿色oled的超高发光效率。优异的性能是由于花束状的铱树状大分子,可以改善电子注入,并通过暴露缺电子部分使电子和空穴通量更好地平衡。本文报道的分子设计提供了一种简单有效的方法来平衡电荷注入/传输能力,并开发出适合低成本单层器件技术的高效非掺杂荧光粉。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Materials Chemistry C
Journal of Materials Chemistry C MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
10.80
自引率
6.20%
发文量
1468
期刊介绍: The Journal of Materials Chemistry is divided into three distinct sections, A, B, and C, each catering to specific applications of the materials under study: Journal of Materials Chemistry A focuses primarily on materials intended for applications in energy and sustainability. Journal of Materials Chemistry B specializes in materials designed for applications in biology and medicine. Journal of Materials Chemistry C is dedicated to materials suitable for applications in optical, magnetic, and electronic devices. Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive. Bioelectronics Conductors Detectors Dielectrics Displays Ferroelectrics Lasers LEDs Lighting Liquid crystals Memory Metamaterials Multiferroics Photonics Photovoltaics Semiconductors Sensors Single molecule conductors Spintronics Superconductors Thermoelectrics Topological insulators Transistors
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