Abdul Mateen Mohammed;Seyed Morteza Alizadeh;Kamyar Mehranzamir
{"title":"A Consistent Analytical Method to Assess Reliability of Redundant Safety Instrumented Systems","authors":"Abdul Mateen Mohammed;Seyed Morteza Alizadeh;Kamyar Mehranzamir","doi":"10.1109/TDMR.2022.3193922","DOIUrl":null,"url":null,"abstract":"The significance of determining Safety Integrity Level (SIL) has grown substantially in numerous industry sectors since the publication of international standard for functional safety (IEC61508). To detect SIL using IEC61508, the demand mode must first be recognised. However, there is not any 100% accurate method to identify the demand mode. Design engineers must assume the demand mode based on their assessment of the likely number of failures each year in the system under consideration, referred to as demand rate. This signifies that a defective demand mode assumption leads to an incorrect SIL determination. In addition, the formulas provided by the IEC standards for the SIL determination did not include the demand duration. The majority of prior publications in the literature relied on SIL determination using IEC61508. As a result, the literature suffers from the constraints of the IEC61508 standard, which include ignoring demand duration and uncertainty in assuming the system’s demand mode for determining SIL. This paper addresses the aforementioned issues in literature through proposing a scenario based-formula to calculate Hazardous Event Frequency (HEF) using Markov process for safety system with dual redundancy. The HEF calculated can then be utilized to select SIL while considering the demand duration and obviating the requirement to use the SIS demand mode. The results demonstrated that the proposed method provides higher accuracy in calculating the HEF value compared to the existing traditional formulas.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"22 3","pages":"447-456"},"PeriodicalIF":2.5000,"publicationDate":"2022-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Device and Materials Reliability","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/9843913/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The significance of determining Safety Integrity Level (SIL) has grown substantially in numerous industry sectors since the publication of international standard for functional safety (IEC61508). To detect SIL using IEC61508, the demand mode must first be recognised. However, there is not any 100% accurate method to identify the demand mode. Design engineers must assume the demand mode based on their assessment of the likely number of failures each year in the system under consideration, referred to as demand rate. This signifies that a defective demand mode assumption leads to an incorrect SIL determination. In addition, the formulas provided by the IEC standards for the SIL determination did not include the demand duration. The majority of prior publications in the literature relied on SIL determination using IEC61508. As a result, the literature suffers from the constraints of the IEC61508 standard, which include ignoring demand duration and uncertainty in assuming the system’s demand mode for determining SIL. This paper addresses the aforementioned issues in literature through proposing a scenario based-formula to calculate Hazardous Event Frequency (HEF) using Markov process for safety system with dual redundancy. The HEF calculated can then be utilized to select SIL while considering the demand duration and obviating the requirement to use the SIS demand mode. The results demonstrated that the proposed method provides higher accuracy in calculating the HEF value compared to the existing traditional formulas.
期刊介绍:
The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.