Degradation Mapping and Impact of Device Dimension on IGZO TFTs BTI

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2023-06-02 DOI:10.1109/TDMR.2023.3282298

Pietro Rinaudo;A. Chasin;J. Franco;Z. Wu;S. Subhechha;G. Arutchelvan;G. Eneman;B. Y. V. Ramana;N. Rassoul;R. Delhougne;B. Kaczer;I. De Wolf;G. S. Kar

引用次数: 0

Abstract

We studied the impact of gate and drain stress biases combination on IGZO based TFTs degradation targeting hot carrier regime. We show that typical signatures of this mechanism (e.g., saturation current degradation and SS increase) are not visible even at high drain biases, while a gate bias dependence only (BTI) is present in most of the degradation data. We also identify an unexpected gate-length dependence of BTI, for which different extrinsic causes are investigated.

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器件尺寸对IGZO TFTs BTI的退化映射及影响

我们研究了栅极和漏极应力偏差组合对基于IGZO的TFTs热载流子降解的影响。我们发现，即使在高漏极偏置下，这种机制的典型特征(例如，饱和电流退化和SS增加)也不可见，而大多数退化数据中仅存在栅极偏置依赖(BTI)。我们还发现了一个意想不到的门长度依赖的BTI，其中不同的外部原因进行了调查。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.