Guest Editorial TDMR IIRW Special Section

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2023-09-06 DOI:10.1109/TDMR.2023.3306195

Francesco Maria Puglisi

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引用次数: 0

Abstract

The IEEE International Integrated Reliability Workshop (IIRW) is a unique event that takes place every year at the beautiful Fallen Leaf Lake, South Lake Tahoe, CA, USA. The workshop brings together reliability engineers and researchers from all around the world, to exchange ideas over four days in a welcoming, pleasant, and informal setting. The workshop focuses on the recent advances in research on semiconductor device reliability and the related challenges. Topics include transistor and front-end-of-the-line (FEOL) reliability, time-dependent dielectric breakdown (TDDB), bias temperature instability (BTI), hot carrier (HC), back-end-of-the-line (BEOL) reliability, electro-migration, circuit reliability, packaging reliability, conventional and emerging memory reliability, failure analysis, wafer-level reliability, and many others. Specifically, in 2022 IIRW focus areas were circuit reliability (device-circuit degradation and aging), in-memory computing and neuromorphic reliability, plasma-induced damage (PID), and electrostatic discharge (ESD).

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特邀编辑TDMR IIRW专区

IEEE国际集成可靠性研讨会(IIRW)是一项独特的活动，每年在美国加利福尼亚州南太浩湖美丽的落叶湖举行。研讨会汇集了来自世界各地的可靠性工程师和研究人员，在四天的热情，愉快和非正式的环境中交流思想。研讨会的重点是半导体器件可靠性研究的最新进展和相关挑战。主题包括晶体管和前端(FEOL)可靠性、时变介电击穿(TDDB)、偏置温度不稳定性(BTI)、热载流子(HC)、后端(BEOL)可靠性、电迁移、电路可靠性、封装可靠性、传统和新兴存储器可靠性、失效分析、晶圆级可靠性等。具体来说，2022年IIRW的重点领域是电路可靠性(器件电路退化和老化)、内存计算和神经形态可靠性、等离子体诱导损伤(PID)和静电放电(ESD)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.