Simulation Study of High-Speed Ge Photodetector Dark and Light Current Degradation

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2022-06-23 DOI:10.1109/TDMR.2022.3185671

Balraj Arunachalam;Quentin Rafhay;David Roy;Anne Kaminski-Cachopo

引用次数: 2

Abstract

The reliability of Ge photodetectors used in the framework of Si photonics is studied using TCAD simulation, in order to better understand the physical origin of dark current and responsivity degradation observed in Sy et al. (2019). It is shown that bulk and interface recombination mainly modify the SRH dominated dark and light currents, while fixed charge and

$\text{D}_{\mathrm{ it}}$

strongly impacts band-to-band tunneling dark currents. This essential distinction shows the necessity to discriminate the dominating transport mechanisms in photodetectors using activation energy measurement, in order to better identify the origin of performance degradation. It also strengthens the requirement for adequate passivation of all interfaces to reach higher lifetime of photodetectors.

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高速锗光电探测器暗、光电流退化的仿真研究

为了更好地理解Sy等人(2019)观察到的暗电流和响应率下降的物理起源，我们使用TCAD模拟研究了Si光子学框架中使用的Ge光电探测器的可靠性。结果表明，体积复合和界面复合主要改变SRH主导的暗电流和光电流，而固定电荷和$\text{D}_{\ maththrm {It}}$对带间隧穿暗电流影响较大。这一本质区别表明，有必要利用活化能测量来区分光电探测器中主要的传输机制，以便更好地确定性能下降的根源。这也加强了对所有界面充分钝化的要求，以达到更高的光电探测器寿命。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.