Temperature-Dependent Study of Large-Signal Reliability of p-FET-Based Power Amplifier for mmWave Applications

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2023-07-11 DOI:10.1109/TDMR.2023.3293794

Aarti Rathi;Purushothaman Srinivasan;Fernando Guarin;Abhisek Dixit

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引用次数: 0

Abstract

For the first time, the temperature dependence of RF reliability of a power amplifier (PA) is investigated for the mmWave frequency band. The PA comprises a common source configured single pFET fabricated in 45RFSOI technology by GlobalFoundries. Temperature dependence of DC and large-signal figures of merit (FOMs) are analysed as a function of RF power levels and DC stress at the gate terminal for a continuous wave (CW) frequency of 26.5GHz. In this study, we have also investigated the relationship between temperature and the time slope exponent obtained from the % degradation in ON current

$(I_{ON})$

for different operating regions of PA. The degradation mechanism involves trapping hot holes in pre-existing traps and the generation of new traps in the oxide due to hot holes. A non-linear relationship between DC and RF FOMs

$(I_{ON}$

and

$P_{OUT})$

is investigated for the increasing temperature. The non-linear relationship extracted from the slope between

${\Delta }I_{ON}$

and

${\Delta }P_{OUT}$

shows that the DC performance is impacted more than the RF performance with the increasing temperature. Degradation in output power of PA cell increases with the temperature. As a result, the lifetime of PA cell decreases with increasing temperature and fails to achieve a 10-year lifetime.

查看原文本刊更多论文

基于p- fet的毫米波功率放大器大信号可靠性的温度依赖性研究

首次研究了毫米波频段功率放大器射频可靠性与温度的关系。PA由GlobalFoundries采用45RFSOI技术制造的通用源配置单pet组成。分析了连续波频率为26.5GHz时，直流和大信号优值(FOMs)与射频功率电平和栅极端直流应力的温度依赖关系。在这项研究中，我们还研究了温度与时间斜率指数之间的关系，该指数由PA不同工作区域的ON电流$(I_{ON})$的%退化得到。降解机制包括在已有的陷阱中捕获热孔和在氧化物中由于热孔而产生新的陷阱。研究了温度升高时直流和射频FOMs $(I_{ON}$和P_{OUT})$之间的非线性关系。从${\Delta}I_{ON}$和${\Delta}P_{OUT}$的斜率中提取的非线性关系表明，随着温度的升高，直流性能受到的影响大于射频性能。PA电池输出功率的衰减随温度的升高而增大。因此，PA电池的寿命随着温度的升高而降低，不能达到10年的寿命。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.